GaN基激光器多量子阱结构的性能表征与结构优化
Characteristics and Structural Optimization of Multi-Quantum-Well Structure of GaN-Based Laser Diode
摘要
研究了包括四元合金在内的三种多量子阱结构,对以此为有源层的激光器进行了性能表征和比较分析.通过对阈值电流和外微分量子效率的测量以及增益分布的模拟分析,证实了四元合金用于量子阱结构生长对提高激光器性能的作用.此外对优化的量子阱结构激光器的漏电流和增益饱和带来的影响进行了研究.
基金
国家自然科学基金资助项目(批准号:60477011,60476028,60406007,60276010)
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