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氧含量对RF磁控溅射ZnO薄膜结构特性的影响 被引量:2

Effects of Oxygen Content on the Crystal Quality of ZnO Films Grown on Si by RF-Magnetron Sputtering
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摘要 采用射频(RF)磁控溅射的方法,通过改变工作气氛中氩气和氧气的比例,在Si(100)衬底上沉积出具有高度C轴择优取向的ZnO薄膜.实验发现随着O2/(Ar+O2)比的增加,薄膜的沉积速率下降.O2/(Ar+O2)比对薄膜结晶状态有明显影响,O2/(Ar+O2)比约为0.45,薄膜结晶质量较好.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第z1期160-162,共3页 半导体学报(英文版)
基金 深圳市科学和技术基金(批准号:200448,200503)和广东省自然科学基金(批准号:04300875)资助项目
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