脉冲激光沉积法Li-N双受主共掺p型ZnO薄膜的生长及其特性
Preparation and Characterization of p-Type ZnO Using Li-N Dual-Acceptor Doping Method by Pulsed Laser Deposition
摘要
采用脉冲激光沉积技术制备了Li-N双受主共掺杂p型ZnO薄膜,其中Li来自Li掺杂ZnO陶瓷靶,N来自N2O生长气氛.室温Hall测试发现Li-N共掺p型ZnO薄膜的最低电阻率为3.99Ω·cm,迁移率为0.17cm2/(V·s),空穴浓度为9.12×1018cm-3.PL谱测试发现了与Li受主和N受主态相关的发光峰,其受主能级分别约为120和222meV.由p-ZnO:(Li,N)薄膜制备的ZnO同质p-n结具有整流特性.
基金
国家自然科学基金资助项目(批准号:50532060,50572095)
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