开口同轴探头测量微波集成电路基片的复介电常数

Nondestructive Determination of Complex Permittivity ofSubstrates Using Open-Ended Coaxial Probe

本文论述了开口同轴（无外加法兰）非破坏测量微波集成电路基片复介电常数的方法。文中阐明了开口同轴FDTD法的建模与测量原理。由于FDTD法建模是一种全波分析方法，出此该模型相当准确。在S和X波段测量了聚四氟乙烯材料和另一种介质基片的复介电常数，所得结果与它们的典型值非常吻合。开口同轴法测量具有非破坏性，适于现场测量，而且具有设备简单、操作方便、测量精度高等优点。

Abstract: The FDTD method is applied to analyze an open-ended coaxial probe without extra flange fornondestructive measuring the complex permittivity of substrates. The excitation of complex waves, which includesurface waves and radiative wave in materials under test, is considered, so this method can be used to measureaccurately the complex permittivity of substrates with high or low permittivity. Experiments are conducted to verifythe method.