摘要
本文利用三维FDTD法分析了ATEM Cell内放入导体DUT和介质DUT后场的分布，重点介绍放入导体DUT和介质DUT后对一些计算问题的处理方法以及ATEM Cell内电场幅度及横电磁波场特性的变化。
Abstract: In this paper the three dimensional FDTD-method is used to analyze the fie1d distribution in ATEMCell with conducting DUT and dielectric DUT. The calculation method, the change of tl1e aniplitude of electric fieldand the characteristics of the TEM field in ATEM Cells are introduced emphatically.
出处
《微波学报》
CSCD
北大核心
2002年第1期67-70,共4页
Journal of Microwaves
关键词
ATEM
Cell
导体DUT
介质DUT
三维FDTD法
Key words: ATEM cell (anti-symmetrical transverse electromagnetic cell ), Conducting DUT, DielectricDUT, Three-dimensional FDTD method
