摘要
b Deep level defects in high temperature annealed semi-condctng InP have been studied by deep level transient spectroscopy (DLTS). There is obvious difference in the deep defects between as-grown InP InP annealed in phosphorusambient and iron phosphide ambient, as far as their quantity and coneentration are concerned. Only two defects at 0.24 and 0.64 eV can be detected in InP annealed in iron phosphide amibent, while defects at 0.24,0.42,0.54 and 0.64 eV have been detected in InP annealed in phosphorus ambient, in contrast to two defects at 0.49 and 0.64 eV or one defect at 0.13 eV in as-grown InP. A defect suppression phenomenon related to iron diffusion process has been observed. The formation mechanism and the nature of the defects have been discussed.
b Deep level defects in high temperature annealed semi-condctng InP have been studied by deep level transient spectroscopy (DLTS). There is obvious difference in the deep defects between as-grown InP InP annealed in phosphorusambient and iron phosphide ambient, as far as their quantity and coneentration are concerned. Only two defects at 0.24 and 0.64 eV can be detected in InP annealed in iron phosphide amibent, while defects at 0.24,0.42,0.54 and 0.64 eV have been detected in InP annealed in phosphorus ambient, in contrast to two defects at 0.49 and 0.64 eV or one defect at 0.13 eV in as-grown InP. A defect suppression phenomenon related to iron diffusion process has been observed. The formation mechanism and the nature of the defects have been discussed.
