摘要
High-quality gallium nitride (GaN) films were prepared on Si(111) substrates by sputtering post-annealing-reaction technique. XRD, XPS, and SEM measurement results indicate that polycrystalline GaN with hexagonal structure was successfully prepared. Intense room- temperature photoluminescence that peaked at 354 nm of the films is observed. The bandgap of these films has a blueshift with respect to bulk GaN.
High-quality gallium nitride (GaN) films were prepared on Si(111) substrates by sputtering post-an nealing-reaction technique. XRD, XPS, and SEM measurement results indicate that polycrystalline GaN with hexagonal structure was successfully prepared. Intense room-temperature photoluminescence that peaked at 354 nm of the films is observed. The bandgap of these films has a blueshift with respect to bulk GaN.
基金
the National Natural Science Foundation of China(Grant No.60071006).
