摘要
A kind of filed-emission array pressure sensor is designed based on the quantum tunnel effect. The nano-crystalline silicon film is prepared by chemical vapor deposition (CVD) method, with the grain dimension and thickness of the film 3—9 nm and 30—40 nm, respectively. The nano-crystal- line silicon film is introduced into the cathode cones of the sensor, functioning as the essential emission part. The silicon nano phase is analyzed by HREM and TED, the microstructure of the single emitter and emitters array is inspected by SEM, and the field emission characteristics of the device are studied by an HP4145B transistor tester. The experimental results show that the measured current density emitted from the effective area of the sensor can reach 53.5 A/m2 when the exterior electric field is 5.6×105 V/m.
A kind of filed-emission array pressure sensor is designed based on the quantum tunnel effect. The nano-crystalline silicon film is prepared by chemical vapor deposition (CVD) method, with the grain dimension and thickness of the film 3–9 nm and 30–40 nm. respectively. The nano-crystal-line silicon film is introduced into the cathode cones of the sensor, functioning as the essential emission part. The silicon nano phase is analyzed by HREM and TED, the microstructure of the single emitter and emitters array is inspected by SEM, and the field emission characteristics of the device are studied by an HP4145B transistor tester. The experimental results show that the measured current density emitted from the effective area of the sensor can reach 53.5 A/m2 when the exterior electric field is 5.6×105 V/m.
