摘要
The influence of growth pressure of GaN buffer layer on the properties of MOCVD GaN on -Al2O3 has been investigated with the aid of a home-made in situ laser reflectometry meas-urement system. The results obtained with in situ measurements and scanning electron micro-scope show that with the increase in deposition pressure of buffer layer, the nuclei increase in size, which roughens the surface, and delays the coalescence of GaN nuclei. The optical and crystalline quality of GaN epilayer was improved when buffer layer was deposited at high pressure.
The influence of growth pressure of GaN buffer layer on the properties of MOCVD GaN on α-Al2O3 has been investigated with the aid of a home-made in situ laser reflectometry measurement system. The results obtained with in situ measurements and scanning electron microscope show that with the increase in deposition pressure of buffer layer, the nuclei increase in size, which roughens the surface, and delays the coalescence of GaN nuclei. The optical and crystalline quality of GaN epilayer was improved when buffer layer was deposited at high pressure.
基金
This work was supported by the National Natural Science Foundation of China(Grant No.69825107)
the National Outstanding Youth Fund(Grant No.5001161953)
NSFC-RGC Union Fund(Grant No.NHKU028/00).
