IGCT无吸收和串联工作电路仿真的新型有效的物理模型

A New Validated Physically Based IGCT Model for Circuit Simulationof Snubberless and Series Operation

文章讨论了用SaberMAST软件完成电路仿真,并精确计算集成门极换流晶闸管(IGCT)静态和动态性能的新物理模型。通过仿真结果与硬开关无吸收工作中4.5kV/3kAIGCT的试验结果的比较验证了该模型。此外,文章还分析了2个串联IGCT开关的仿真结果,特别是在忽略无吸收电路时器件特性和门极驱动存在的必然差别引起的关于开关之间阻断电压非均衡分布的问题。还给出了计算吸收容量的一种想法。

This paper deals with a new physically based model for the circuit simulation, which is implemented in Saber MAST, tocalculate the static and dynamic behavior of integrated gate-commutated thyristor (IGCT) devices correctly. The model is verified by comparingsimulation with experimental results of a 4.5kV/3kA IGCT in hard-switch snubberless operation. Furthermore, simulation results of two series-connected IGCT switches are analyzed, in particular, concerning the problem of nonsymmetrically distributed blocking voltages between theswitches if snubbers are omitted due to inevitably existent differences concerning the exact device properties and the gate drives, respectively.An idea for dimensioning the snubber capacity is given.