AlN-SiC微波衰减陶瓷在X波段的选频衰减性能

Frequency-selective attenuation performance of AlN-SiC microwave attenuation ceramics within the X-band

以氮化铝、碳化硅为原料,氧化钇为烧结助剂,在1900℃、氮气气氛中,采用热压烧结工艺制备了AlN-SiC复相微波衰减材料。借助网络分析仪,研究了该材料在8~12GHz的微波衰减性能。结果表明,当SiC质量分数从0增加到9%时,该材料的谐振损耗峰所对应的频率从10.86GHz降低到10.11GHz,所对应的峰值从3.2dB降低到0.7dB,而该材料的有效衰减带增大;在900~1000℃、氢气(纯度≥99.99%)气氛中保温30~50min后,该材料的谐振频率维持在10.65~10.62GHz,谐振峰峰值略微减小;这表明在氢气气氛中的热处理对该材料的微波衰减性能影响较小。

AlN-SiC composites were prepared by the hot-press sintering method at 1 900℃ in nitrogen,with AlN and SiC as raw materials and Y2O3 as sintering additive.The microwave attenuation performance of the AlN-SiC composites within the range of 8～12 GHz were studied using the network analyzer.The results show that,when the content of SiC is increased from 0 to 9%(mass fraction),the frequency and value of the resonant attenuation peak of the AlN-SiC composites reduce from 10.86 GHz to 10.11 GHz and from 3.2 dB to 0...