摘要
During large diameter Czochralski silicon growth, heat zone and argon flow influence the formation of defects in silicon crystal by changing the distribution of temperature. Different silicon crys tals with various density of grown-in defects were grown by replacing the popular heater with the com posite heater and changing the popular argon flow into a controlled flow. The experimental results have been explained well by the numeric simulation of argon flow.
During large diameter Czochralski silicon growth, heat zone and argon flow influence the formation of defects in silicon crystal by changing the distribution of temperature. Different silicon crystals with various density of grown-in defects were grown by replacing the popular heater with the composite heater and changing the popular argon flow into a controlled flow. The experimental results have been explained well by the numeric simulation of argon flow.
基金
This work was supported by the National Natural Science Foundation of China (Grant No. 69876006)
Hebei Province (Grant No. 002135020).
