Cu(In,Ga)Se_2太阳能电池窗口层ZnO∶Al薄膜的研究

ZnO∶Al Window Layer for Cu(In,Ga)Se_2 Based Solar Cell

用射频磁控溅射氧化锌掺铝陶瓷靶的方法在玻璃衬底上制备了ZnO∶Al薄膜。研究了衬底温度(Ts)、靶基距(Dt-s)对薄膜结构及光电性能的影响。实验结果显示:Ts在室温至300℃、Dt-s在35~60 mm范围内时,薄膜为六方相结构,并具有C轴取向,可见光范围平均透光率大于88%。Ts及Dt-s对薄膜电学性能的影响相似,随Ts升高或Dt-s增大,ZnO∶Al薄膜的电阻率先减小后增大,霍尔迁移率先增大后减小,载流子浓度逐渐减小。在Ts为150℃,Dt-s为40 mm时,可获得最低电阻率4.18×10-4Ω.cm的ZnO∶Al薄膜,其载流子浓度为8.13×1020cm-3、霍尔迁移率为18 cm2.V-.1s-1,可见光范围平均透过率为89%。

ZnO∶Al thin films were prepared on glass substrates by RF magnetron sputtering from ceramic target.Effects of substrate temperature(Ts) and target-substrate distance(Dt-s) on structural,electrical and optical properties of the ZnO∶Al thin films were studied.The results showed that the ZnO∶Al thin films deposited in the Ts range from room temperature to 300 ℃ and the Dt-s range from 35 mm to 60 mm were hexagonal polycrystalline with strongly preferred orientation of C axis,and average transmittance of the fi...