掺硅类金刚石薄膜的制备与表征

Preparation and Characterization of Si-doped Diamond-like Carbon Films

利用射频等离子增强化学气相沉积(R.F.PECVD)与非平衡磁控溅射相结合的技术,通过调节甲烷与氩气的比例,在不锈钢基底上制备了一系列硅含量不同的掺硅类金刚石(Si–DLC)薄膜。通过XPS谱图获得了各Si–DLC薄膜的化学组成及Si元素的相对含量。采用非接触式三维轮廓仪测量了薄膜的表面形貌、粗糙度和厚度。采用纳米压痕技术获得了各薄膜的纳米硬度。在UMT–2MT摩擦试验机采用划痕法评价了各薄膜的结合强度,并在CSM摩擦试验机上考察了各薄膜在空气及水环境下的摩擦学性能。结果表明,各薄膜的纳米硬度和结合强度有相似的变化规律,其最佳值均出现在CH4/Ar=5/6处;而当CH4/Ar=7/6时,薄膜在水环境下的摩擦学性能能得到显著提高,摩擦因数仅为0.012。

Si-doped diamond-like carbon (Si-DLC) films with different Si content were deposited on stainless steel substrates using a hybrid radio frequency plasma-enhanced chemical vapor deposition (R.F. PECVD) and non-balanced magnetron sputtering deposition technique, by adjusting the mass flow ratio of CH 4 to Ar in the source gases. Chemical composition as well as the relative atomic concentration of Si was obtained from XPS spectra. Surface topography, roughness and thickness of films were measured by employing ...