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Kinetic calculation for the reaction of H with Si_2H_6 using the variational transition state theory

Kinetic calculation for the reaction of H with Si_2H_6 using the variational transition state theory
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摘要 The reaction of disilane with atomic hydrogen has been studied. This reaction involves both substitution and abstraction. Calculations show that the hydrogen abstraction is the strongest competing channel. The canonical variational transition state theory with a small curvature tunneling correction (SCT) has been used for the kinetic calculation. The theoretical results are in good agreement with the available experimental data. Comparing the reactions of atomic hydrogen with disilane and silane, it can be seen that the reactivity of the Si-H bond is higher in Si2H6than that in SiH4. The reaction of disilane with atomic hydrogen has been studied. This reaction involves both substitution and abstraction. Calculations show that the hydrogen abstraction is the strongest competing channel. The canonical variational transition state theory with a small curvature tunneling correction (SCT) has been used for the kinetic calculation. The theoretical results are in good agreement with the available experimental data. Comparing the reactions of atomic hydrogen with disilane and silane, it can be seen that the reactivity of the Si-H bond is higher in Si2H6 than that in SiH4.
出处 《Science China Chemistry》 SCIE EI CAS 2001年第6期606-615,共10页 中国科学(化学英文版)
基金 the Research Fund for the Doctoral Program of High Education of China (Grant No. 1999042201).
关键词 ab initio 计算 反应机制 变化转变状态 通道效果 评估常数 ab initio calculation reaction mechanism variational transition state tunneling effect rate constants
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参考文献10

  • 1J. Abrefah and D. R. Olander.Reaction of atomic hydrogen with crystalline silicon[].Surface Science.1989
  • 2Durig J R,Church J S.Vibrational spectra of crystalline disilane and disilane-d6, barrier to internal rotation and some normal coordinate calculations on H3SiSiH3, H3SiNCO, H3SiNCS[].The Journal of Chemical Physics.1980
  • 3Gates S M,Kuna R R,Greenlief C M.Silicon hydride etch products from the reaction of atomic hydrogen with Si(100)[].Surface Science.1989
  • 4T. L. Pollock,H. S. Sandhu,A. Jodhan,O. P. Strausz.Photochemistry of silicon compounds IV. Mercury photosensitization of disilane[].Journal of the American Chemical Society.1973
  • 5Fabry L,Potzinger P,Reimann B,et al.Gas-phase homolytic substitution reactions of hydrogen atoms at silicon centers[].Organometallics.1986
  • 6Oberhammer H,Lobreyer T,Sundermeyer W.The Ge-Si bond in silylgermane discrepancy between experiment and theory[].Journal of Molecular Structure.1994
  • 7Espinosa-Garcia J,Sanson J,Corchado J C.The SiH4+H →SiH3+H2 reaction: Potential energy surface, rate constants, and kinetic isotope effects[].The Journal of Chemical Physics.1998
  • 8Charles B M,Siddharth D,William A G.Hessian biased force field for polysilane polymers[].The Journal of Physical Chemistry.1995
  • 9Wu Y D,Wong C L.Substituion effect on the dissociation energy of the Si-H bond: A density functional study[].Journal of Organic Chemistry.1995
  • 10Craig A. Taylor and Paul Marshall.A discharge-flow/chemiluminescence study of the reaction O+Si<sub>2</sub>H<sub>6</sub> at room temperature[].The Journal of Chemical Physics.1993

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