摘要
Fluorinated amorphous carbon (a-C:F) thin film has been deposited by microwave electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD) using C6H6 and CHF3 as source gases. The result of x-ray photoelectron spectroscopy (XPS) shows that the main bonds in the film as-deposited are C-C, C-F and CF2. The measurement of postive I-V property indicates that the conductance of the film presents Omic characteristic at a lower electric field ,and follows Schotty emission at a higher electric field.
Fluorinated amorphous carbon (a-C:F) thin film has been deposited by microwave electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD) using C6H6 and CHF3 as source gases. The result of x-ray photoelectron spectroscopy (XPS) shows that the main bonds in the film as-deposited are C-C, C-F and CF2. The measurement of postive I-V property indicates that the conductance of the film presents Omic characteristic at a lower electric field ,and follows Schotty emission at a higher electric field.
