GaAs/AlGaAs超晶格的光致发光

PHOTOLUMINESCENCE OF GaAs/AlGaAs SUPERLATTICE

在温度T =77K ,测量了GaAs/Al0 3Ga0 7As超晶格的光致发光 ,发现在波数 v =1 3 1 56cm- 1和 v =1 2 2 89cm- 1处分别存在一个强发光峰和一个弱峰 .理论分析表明 ,强峰是量子阱中基态电子与重空穴复合发光 ;而弱峰与底层GaAs重掺Si有关 .由强发光峰的半高宽可以确定量子阱中的掺杂浓度 .理论计算值与实验结果符合得很好 .

Photoluminescence for GaAs/Al 0.3 Ga 0.7 As superlattice at T=77 K was measured.A strong peak at =13 156 cm -1 and a weak peak at =12 289 cm -1 on the photoluminescence spectrum was observed.The strong peak can be attributed to recombination of electrons on ground state in quantum well and holes,and the weak one is related to highly Si doping GaAs bottom Layer.The calculated positions of photoluminescence peaks are in good agreement with experimental results.Si Doping density in quantum well can be determined by full width of half of maximum of strong peak.