摘要
The implantation of Cu into Si substrate was carried out by plasma based ion implantation (PBII) using unbalanced magnetron sputtering (UBMS) cathode as the metal plasma source. The different pulse bias ( U p) and the distance between the cathode and the samples ( d s-t ) were chosen to research the characteristics of this method. The results show that the implantation of metal ions can be realized by the metal plasma source of UBMS cathode. The physical process such as the metal ion pure implantation, the gas ion implantation, the recoil implantation of the metal atoms, the deposition of the metal particles and the re sputtering of the metal film depend on the energy, dose and deposition rate of the ions (Cu +, Ar +). The metal plasma based ion implantation of Cu into Si substrate is favored by selecting higher U p (60 kV) and larger d s-t (200 mm). [
The implantation of Cu into Si substrate was carried out by plasma-based ion implantation (PBII) using unbalanced magnetron sputtering (UBMS) cathode as the metal plasma source. The different pulse bias (U-p) and the distance between the cathode and the samples (d(s-t)) were chosen to research the characteristics of this method. The results show that the implantation of metal ions can be realized by the metal plasma source of UBMS cathode. The physical process such as the metal ion pure implantation, the gas ion implantation, the recoil implantation of the metal atoms, the deposition of the metal particles and the re-sputtering of the metal film depend on the energy, dose and deposition rate of the ions (Cu+, Ar+). The metal plasma based ion implantation of Cu into Si substrate is favored by selecting higher U-p(60 kV) and larger d(s-t)(200 mm).
出处
《中国有色金属学会会刊：英文版》
CSCD
2001年第2期173-177,共5页
Transactions of Nonferrous Metals Society of China
