摘要
NiOx/Ni81Fe19 and Co/AlOx/Co magnetic multilayers were fabricated by reactive RF/DC magnetron sputtering on clean glass substrates and oxidized Si (100) substrates, respectively. The exchange biasing field (H-ex) between NiO4 and Ni81Fe19 as a function of NiOx oxidation states was studied by X-ray photoelectron spectroscopy (XPS). The oxidation states and the oxide thickness of Al layers in magnetic multilayer films consisting of Co/AlOx/Co were also analyzed. It is found that the H-sr of NiOx/Ni81Fe19 films only depends on Ni2+ but not on Ni3+ or Ni. The bottom Co can be completely covered by depositing an A I layer thicker than 2.0 nm. The oxide layer was Al2O3, and its thickness was 1.15 mn.
NiOx/Ni81Fe19 and Co/AlOx/Co magnetic multilayers were fabricated by reactive RF/DC magnetron sputtering on clean glass substrates and oxidized Si (100) substrates, respectively. The exchange biasing field (H-ex) between NiO4 and Ni81Fe19 as a function of NiOx oxidation states was studied by X-ray photoelectron spectroscopy (XPS). The oxidation states and the oxide thickness of Al layers in magnetic multilayer films consisting of Co/AlOx/Co were also analyzed. It is found that the H-sr of NiOx/Ni81Fe19 films only depends on Ni2+ but not on Ni3+ or Ni. The bottom Co can be completely covered by depositing an A I layer thicker than 2.0 nm. The oxide layer was Al2O3, and its thickness was 1.15 mn.
作者
Guanghua Yu, Hongchen Zhao, Jiao Teng, Chunlin Chai, Fengwu Zhu, Yang Xia, Shumin Chai Material Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China Microelectronics Center, Chinese Academy of Science, Beijin
基金
the National Natural Science Foundation of China under Grant No. 19890310.]
