Electrical characteristics of MOS capacitor using amorphous Gd_2O_3-doped HfO_2 insulator 被引量：1

Electrical characteristics of MOS capacitor using amorphous Gd_2O_3-doped HfO_2 insulator

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摘要 This work described the electrical characteristics of a kind of amorphous Gd2O3-doped HfO2 insulator for high-k metal-oxide-semiconductor(MOS) capacitors.Compared with pure HfO2,the doped HfO2 with an optimum concentration of Gd2O3 as MOS gate dielectric exhibited a lower leakage current,thinner effective oxide thickness and less fixed oxide charges density.The result indicated that Gd2O3 doping power of 60 W exhibited the best electrical characteristics,maximum capacitance,lowest leakage current of 9.35079... This work described the electrical characteristics of a kind of amorphous Gd2O3-doped HfO2 insulator for high-k metal-oxide-semiconductor(MOS) capacitors.Compared with pure HfO2,the doped HfO2 with an optimum concentration of Gd2O3 as MOS gate dielectric exhibited a lower leakage current,thinner effective oxide thickness and less fixed oxide charges density.The result indicated that Gd2O3 doping power of 60 W exhibited the best electrical characteristics,maximum capacitance,lowest leakage current of 9.35079...

作者季梅王磊熊玉华杜军

机构地区 Advanced Electronic Materials Institute

出处《Journal of Rare Earths》 SCIE EI CAS CSCD 2010年第3期396-398,共3页 稀土学报（英文版）

基金 supported by the National Key Scientific Research Projects (50932001)

关键词 GD2O3 HIGH-K metal-oxide-semiconductor（MOS） rare earths Gd2O3 high-k metal-oxide-semiconductor（MOS） rare earths

分类号 O472.4 [理学—半导体物理]

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