AlN/GaN量子阱中光学声子所限制的电子迁移率

Electron Mobility in AlN/GaN Quantum Wells Limited by Optical Phonon

在介电连续模型和单轴模型的框架下,采用雷-丁平衡方程理论,考虑量子阱中界面光学声子模和局域体光学声子模的影响,分别计算了纤锌矿型和闪锌矿型AlN/GaN量子阱中电子平行于异质结界面方向的迁移率,给出迁移率随阱宽的变化关系,并讨论了结构各向异性效应对电子迁移率的影响.

Based on the dielectric continuum phonon model,uniaxial model and force balance equation,the electronic mobility parallel to the interfaces of wurtzite and zincblende AlN/GaN quantum-wells(QWs) is discussed in consideration of the scattering from the confined and interface optical phonon modes.The dependence of the mobility on the well width is presented.In addition,the influence of structure anisotropy effec on electron mobility is discussed.