N掺杂ZnO薄膜的荧光特性研究

Fluorescence Emission Properties of N-doped ZnO Films

以N2为掺杂源,通过改变O2∶N2比,利用射频磁控溅射法在玻璃衬底上制备了具有[002]择优取向的N掺杂ZnO薄膜,研究了ZnO薄膜的光致发光谱随着N掺入量的不同而变化的规律.结果表明,薄膜主衍射峰为402nm处的发光峰;由于N掺杂量的不同,有的薄膜在445nm和524nm处也有发光发存在,但随着薄膜N含量的不同,其发光峰强度明显不同,其峰位也发生了相应的红移或者蓝移.当O2∶N2为10∶15时,制备的薄膜N掺杂量最大,光学性能最好,此工艺为研究ZnO薄膜的缺陷类型及导电类型提供了重要的研究参考.

Using N2as a doped source to prepare ZnO films,the N-doped ZnO films with strong(002) preferred orientation were deposited on quartz glass substrate by RF magnetron sputtering through changing the ration of O2∶N2.The result shows that the films have a main peak at 402nm;they have other peaks at 445nm,524nm with the different contents of N,and the intensity of the films are different too;the peak position also produced corresponding red shift or blue shift.When O2∶N2is 10∶15,the N doping amount of the film is the largest,and the optical performance is the best.The proposed research provides an important reference for the type of ZnO film defect and conductive.