摘要
在室温及不同的氧氩比条件下,采用射频磁控溅射Ag层和直流磁控溅射SnO2层,在载玻片衬底上制备出了SnO2/Ag/SnO2多层薄膜.用霍尔效应测试仪、四探针电阻测试仪和紫外-可见-近红外光谱仪等表征了薄膜的电学性质和光学性质.实验结果表明:当氧氩比为1∶14时,所制得的薄膜的光电性质优良指数最大,为1.69×10-2Ω-1;此时,薄膜的电阻率为9.8×10-5Ω.cm,方电阻为9.68Ω/sq,在400～800nm可见光区的平均光学透射率达85%;并且,在氧氩比为1∶14时,利用射频磁控溅射Ag层和直流磁控溅射SnO2层在PET柔性衬底上制备出了光电性质优良的柔性透明导电膜,其在可见光区的平均光学透过率达85%以上,电阻率为1.22×10-4Ωcm,方电阻为12.05Ω/sq.
SnO2/Ag/SnO2 tri-layer thin films were prepared on glass substrates by RF magnetron sputtering of SnO2 with different O2/Ar ratio and DC magnetron sputtering of Ag.Several analytical tools such as Hall measurements,four-point probe and ultraviolet-visible-near infrared(UV-Vis-NIR) spectrophotometer were used to explore the causes of the changes in electrical and optical properties.When O2/Ar ratio is 1∶14,the film had a figure of merit of 1.69×10-2 Ω-1,the resistivity is 9.8×10-5 Ω·cm,and the sheet resistance is 9.68Ω/sq,while the average transmittance is still as high as 85% in the visible light region.In addition,when O2/Ar ratio is 1:14,The flexible SnO2/Ag/SnO2 tri-layer thin films with excellent photoelectric performance can be obtained by magnetron sputtering on PET substrates,the average transmittance is above 85%,the resistivity is 1.22×10-4 Ω·cm,and the sheet resistance is 12.05 Ω/sq.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2012年第9期1086-1089,共4页
Acta Photonica Sinica
基金
河南省高校科技创新团队计划(No.2012IRTSTHN004)支持
河南省教育厅自然科学基金(No.2009B48003)资助
