摘要
研究了金刚石膜/氧化铝陶瓷复合材料作为超高速、大功率集成电路封装基板材料的可行性。采用电容法测量了复合材料的介电性质,结果表明在氧化铝上沉积金刚石膜,能有效降低基片材料的介电系数。碳离子预注入处理使介电损耗降低(从5×10-3降低到2×10-3),且频率稳定性更好。金刚石膜的沉积可明显提高基片的热导率,随着薄膜厚度的增加,复合材料的热导率单调递增。当薄膜厚度超过100μm时复合材料的介电系数下降到6.5、热导率上升至3.98W/cm·K,热导率接近氧化铝的20倍。
The feasibility of diamond film coated alumina ceramics used as the packaging substrate of integrated circuits with ultra high speed and high power was studied. The measurement results of dielectric properties of the diamond film/alumina composites show that CVD diamond films can effectively reduce the dielectric constant of the composite. Carbon ions implantated into alumina substrates prior to the diamond deposition can reduce the dielectric loss of the composite from 5x10(-3) to 2x10(-3), and make the composite have better frequency stability. The thermal conductivity of the composite can obviously increase by CVD diamond film. With increasing the thickness of diamond film, the thermal conductivity of the composite will monotonously increase. The composite has a dielectric coefficient of 6.5 and a thermal conductivity of 3.98W/cm(.)K when the thickness of diamond film is up to 100mum.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2004年第4期902-906,共5页
Journal of Inorganic Materials
基金
国家自然科学基金(60277024)
上海市青年科技启明星项目(02QE14018)
上海应用材料研究与发展基金
关键词
金刚石膜
氧化铝陶瓷
集成电路
封装基板
diamond films
alumina
integrated circuits
packaging substrates