期刊文献+

金刚石膜/氧化铝陶瓷复合材料的介电特性和热学性能研究 被引量:10

Dielectric and Thermal Properties of Diamond Film/Alumina Composite
下载PDF
导出
摘要 研究了金刚石膜/氧化铝陶瓷复合材料作为超高速、大功率集成电路封装基板材料的可行性。采用电容法测量了复合材料的介电性质,结果表明在氧化铝上沉积金刚石膜,能有效降低基片材料的介电系数。碳离子预注入处理使介电损耗降低(从5×10-3降低到2×10-3),且频率稳定性更好。金刚石膜的沉积可明显提高基片的热导率,随着薄膜厚度的增加,复合材料的热导率单调递增。当薄膜厚度超过100μm时复合材料的介电系数下降到6.5、热导率上升至3.98W/cm·K,热导率接近氧化铝的20倍。 The feasibility of diamond film coated alumina ceramics used as the packaging substrate of integrated circuits with ultra high speed and high power was studied. The measurement results of dielectric properties of the diamond film/alumina composites show that CVD diamond films can effectively reduce the dielectric constant of the composite. Carbon ions implantated into alumina substrates prior to the diamond deposition can reduce the dielectric loss of the composite from 5x10(-3) to 2x10(-3), and make the composite have better frequency stability. The thermal conductivity of the composite can obviously increase by CVD diamond film. With increasing the thickness of diamond film, the thermal conductivity of the composite will monotonously increase. The composite has a dielectric coefficient of 6.5 and a thermal conductivity of 3.98W/cm(.)K when the thickness of diamond film is up to 100mum.
出处 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2004年第4期902-906,共5页 Journal of Inorganic Materials
基金 国家自然科学基金(60277024) 上海市青年科技启明星项目(02QE14018) 上海应用材料研究与发展基金
关键词 金刚石膜 氧化铝陶瓷 集成电路 封装基板 diamond films alumina integrated circuits packaging substrates
  • 相关文献

参考文献10

  • 1Spear K E. J. Am. Ceram. Soc., 1989, 72 (2): 171-191.
  • 2Nazeri A, Kahn M. Am Ceram. Soc. Bull., 1993, 75: 59-62.
  • 3Johnson W B, Sonuparlak B. J. Mater. Res., 1993, 8 (5): 1169-1173.
  • 4Werner M, Locher R. Rep. Prog. Phys., 1998, 61: 1665-1669.
  • 5Xia Y B, Mo Y W, Wang H, et al. Chin. Phys. Lett., 1996, 7: 557-660.
  • 6Mo Y W, Xia Y B, Huang X Q, et al. Thin Solid Films, 1997, 305: 266-269.
  • 7Fang Z J, Xia Y B, Wang L J, et al. J. Phys. D: Appl. Phys., 2002,35: L57-L60.
  • 8Popovici G, Khasawinah S, Sung T, et al. J. Mater. Res., 1994, 9 (11): 2839-2843.
  • 9王传声.混合微电路封装外壳的封焊技术简介[J].电子元件与材料,1993,12(4):7-8. 被引量:4
  • 10王志明,夏义本,杨莹,方志军,王林军,居建华,范轶敏,张伟丽.金刚石薄膜在氧化铝陶瓷上低压成核[J].无机材料学报,2002,17(4):765-770. 被引量:6

二级参考文献1

共引文献8

同被引文献156

引证文献10

二级引证文献20

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部