摘要
用MWCVD方法在无预处理铜基体上获得了金刚石薄膜和厚膜。所得金刚石膜从基体上自动脱落,但形貌分析和Ramman分析表明,所得金刚石膜具有较好的质量。因此铜是制备金刚石厚膜的理想基体材料。
Diamond thin and thick films were prepared on clean copper substrates by a MWCVD method. The films automatically come off from copper substrates owing to weak adhesion. But micrograph and Ramman spectroscopy show that the films have higher nucleation density and higher quality. These indicate that copper is an ideal substrate for the preparation of thick diamond films.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2004年第4期958-960,共3页
Journal of Inorganic Materials
基金
河南省教委青年基金
关键词
CVD
金刚石厚膜
铜基体
CVD
thick diamond film
copper substrate