Photoluminescence from C^+-implanted SiO_2 Films after GeV Xe and U Ion Irradiations

Photoluminescence from C^+-implanted SiO_2 Films after GeV Xe and U Ion Irradiations

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摘要 In our previous work~[1],we have studied photoluminescence(PL)from 5.0×10^(17) C-ions/cm^2 doped SiO_2 films after 335 and 855 MeV^(40)Ar or 1.98 GeV^(84)Kr ion irradiations.It was found that PL bands centred at～430nm and～380 nm were formed in the C-doped SiO_2 films and the PL intensity decreases with electronic energy loss S_e increasing.In the present work,we studied the PL properties of C-doped SiO_2 films after 1.75 GeV Xe and 2.71 GeV U ion irradiations.

作者 Wang Zhiguang, Jin Yunfan, Xie Erqing, Liu Jie, Zhu Zhiyong, Hou Mingdong Chen Xiaoxi, Sun Youmei and Zhang Qingxiang

出处《IMP & HIRFL Annual Report》 2001年第1期60-60,共1页 中国科学院近代物理研究所和兰州重离子研究装置年报（英文版）

关键词 bands IMPLANTED irradiation DOPANT VIOLET OBSERVABLE irradiated inclu intense NSFC

分类号 O484 [理学—固体物理]

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IMP & HIRFL Annual Report

2001年第1期

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Photoluminescence from C^+-implanted SiO_2 Films after GeV Xe and U Ion Irradiations

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