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Subthreshold current model of fully depleted dual material gate SOI MOSFET

Subthreshold current model of fully depleted dual material gate SOI MOSFET
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摘要 Dual material gate SOI MOSFET with asymmetrical halo can suppress short channel effect and increase carriers transport efficiency. The analytical model of its subthreshold drain current is derived based on the explicit solution of two-dimensional Poisson’s equation in the depletion region. The model takes into consideration the channel length modulation effect and the contribution of the back channel current component. Its validation is verified by comparision with two dimensional device simulator MEDICI. Dual material gate SOI MOSFET with asymmetrical halo can suppress short channel effect and increase carriers transport efficiency. The analytical model of its subthreshold drain current is derived based on the explicit solution of two-dimensional Poisson's equation in the depletion region. The model takes into consideration the channel length modulation effect and the contribution of the back channel current component. Its validation is verified by comparision with two dimensional device simulator MEDICI.
作者 苏军 李尊朝 张莉丽
机构地区 School of Computer Science School of Electronics and Information Engineering
出处 《Journal of Pharmaceutical Analysis》 SCIE CAS 2007年第2期135-137,171,共4页 药物分析学报（英文版）
基金 This work was supported by the National Natural Science Foundation of China (No60472003)
关键词 asymmetrical halo dual material gate subthreshold current asymmetrical halo dual material gate subthreshold current
分类号 TN386.1 [电子电信—物理电子学]
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参考文献11

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共引文献4

Journal of Pharmaceutical Analysis
2007年 第2期

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