表面等离子体干涉光刻理论计算(英文)

Theoretical calculation of plasmonic interference nanolithography

推导了基于衰减全内反射结构的表面等离子体干涉光刻磁场强度分布的解析表达式,讨论了该光刻结构的最优化条件.当激发光为325nm激光,棱镜和光刻胶的折射率分别为1.94和1.53时,最优化的Al膜厚为19.2nm,共振角为58.83°,激发的表面等离子体干涉刻写光栅的特征尺寸为48.9nm,小于1/6波长.计算结果表明,高折射的光刻胶可以制造高分辨率的光栅.

Analytic expression of the intensity of magnetic field of plasmonic interference nanolithography based on attenuated total internal reflection configuration is deduced.The optimum conditions of the lithography are discussed.When the exciting light is 325 nm laser,the refractive indexes of the prism and resist are 1.94 and 1.53 respectively,the optimum thickness of Al film is 19.2 nm,resonance angle is 58.83°.The feature size of the grating inscribed by the excited surface plasmons interference is 48.9 nm,which is smaller than lamda/6.The calculation results show that higher refractive index resist can fabricate grating with higher resolution.