摘要
在分析了单电子晶体管(SET)的I-V特性后,通过对SET背景电荷的设置,使之具有类似PMOS或NMOS的电学特性;同时将传输电压开关理论引入到SET的电路设计中,并用单栅极SET实现了该理论的基本运算电路.随后以异或门和一位比较器为例,利用这些基本运算电路,进行了基于SET的开关级电路设计.最后,利用Pspice软件验证了所设计的电路逻辑功能正确,设计方法可行;电路的输入输出高低电平一致,具有良好的电压兼容性,易于级联.仿真结果表明,与基于互补结构设计的SET电路相比,基于开关级设计的SET电路具有结构简单、功耗低、延迟小的特点.
Based on the analysis of I-V characteristics of single-electron transistor(SET),with some particular settings on the background charge,PMOS- or NMOS-like SET was proposed;meanwhile theory of transmission voltage-switches was introduced into SET circuits design and several basic circuits were realized by single-electron transistors.On the basis of these circuits,XOR and one-bit numerical comparator circuits were presented and verified by simulations with a SPICE package which included the SET-SPICE model.The excellent voltage compatibility of the circuits is achieved with input/output high-and low-voltage approximating 30mv and 0mv respectively.Compared with conventional static complementary logic SET circuits,the amount of device was reduced,and the power dissipation and signal delay were decreased.
出处
《浙江大学学报(理学版)》
CAS
CSCD
2012年第3期293-296,共4页
Journal of Zhejiang University(Science Edition)
关键词
单电子晶体管
传输电压开关理论
异或门
比较器
single-electron transistor(SET)
theory of transmission voltage-switches
XOR
numerical comparator