摘要
Single crystal Ga X In 1-X As films have grown up on GaAs(100) substrate at 375℃ and on InP(100) substrate at 390℃, respectively, by the method of rf sputtering with using undoped GaInAs polycrystal as target. However, on Si(100) or Si(111) substrates at 260～390℃, even at 465℃, only polycrystalline films were obtained. In addition, the structure, composition, electrical characteristic and optical properties of the Ga X In 1-X As films were investigated using X ray diffraction (XRD), reflection of high energy electron diffraction (RHEED), energy dispersion analyzer of X ray (EDAX), Hall measurements and spectroscopic ellipsometry.
Single crystal Ga X In 1-X As films have grown up on GaAs(100) substrate at 375℃ and on InP(100) substrate at 390℃, respectively, by the method of rf sputtering with using undoped GaInAs polycrystal as target. However, on Si(100) or Si(111) substrates at 260～390℃, even at 465℃, only polycrystalline films were obtained. In addition, the structure, composition, electrical characteristic and optical properties of the Ga X In 1-X As films were investigated using X ray diffraction (XRD), reflection of high energy electron diffraction (RHEED), energy dispersion analyzer of X ray (EDAX), Hall measurements and spectroscopic ellipsometry.
