摘要
The composition and structure of Ti 6Al 4V alloy plasma based ion implanted with nitrogen was investigated.The nitrogen depth distribution shows more antiballistic with distribution peak heightened with increased implantation time(dose),and more like a parabola at the low implantation pulse voltage.When implantation pulse voltage is increased,the implantation depth increased with the nitrogen distribution peak being deepened,widened and lowered somewhat.TiN,TiN+Ti 2N,or Ti 2N second phases were formed in the implanted layer.The relative percentage of nitrogen content in the form of TiN increases when going deeper into the implanted(TiN formed) layer.The increase of implantation pulse width and/or time is favourable for the formation of TiN rather than Ti 2N.It is unfavourable for formation of any nitrides when implantation pulse voltage is decreased to 30kV or less.Tiny crystalline particles (made mainly of Ti 2N and a smaller percentage of TiO 2 phases) of regular shapes such as triangle and tetragon, etc .(about 20 nm) are found distrbuted dispersively in the near surface region of samples implanted at the high implantation pulse voltage (75kV).
The composition and structure of Ti 6Al 4V alloy plasma based ion implanted with nitrogen was investigated.The nitrogen depth distribution shows more antiballistic with distribution peak heightened with increased implantation time(dose),and more like a parabola at the low implantation pulse voltage.When implantation pulse voltage is increased,the implantation depth increased with the nitrogen distribution peak being deepened,widened and lowered somewhat.TiN,TiN+Ti 2N,or Ti 2N second phases were formed in the implanted layer.The relative percentage of nitrogen content in the form of TiN increases when going deeper into the implanted(TiN formed) layer.The increase of implantation pulse width and/or time is favourable for the formation of TiN rather than Ti 2N.It is unfavourable for formation of any nitrides when implantation pulse voltage is decreased to 30kV or less.Tiny crystalline particles (made mainly of Ti 2N and a smaller percentage of TiO 2 phases) of regular shapes such as triangle and tetragon, etc .(about 20 nm) are found distrbuted dispersively in the near surface region of samples implanted at the high implantation pulse voltage (75kV).
