摘要
Based on comparison of the single crystal growth from several Czochralski techniques,it showed that the most advantageous method for GaSb growth seems to be LEC pulling method.Highly Te doped GaSb single crystals can be prepared on small scale with good reproducibility by using special filtering technology.Using the Te concentrations calculated from the Hall measurement,the distribution coefficient of tellurium in GaSb was estimated to be about 0.38 under our growth conditions.The etch pit density (EPD) examination in <100> GaSb showed that the profile of EPD is of W shape in growth plane and the value of average EPD is about 1.0×10 -3 cm -2 along growth direction.
Based on comparison of the single crystal growth from several Czochralski techniques,it showed that the most advantageous method for GaSb growth seems to be LEC pulling method.Highly Te doped GaSb single crystals can be prepared on small scale with good reproducibility by using special filtering technology.Using the Te concentrations calculated from the Hall measurement,the distribution coefficient of tellurium in GaSb was estimated to be about 0.38 under our growth conditions.The etch pit density (EPD) examination in <100> GaSb showed that the profile of EPD is of W shape in growth plane and the value of average EPD is about 1.0×10 -3 cm -2 along growth direction.
