摘要
A new set of technique was adopted in bonding Si-Si by using Ge (Ⅳ element),which is used as the substitute for the common hydrophilic method. The bond layer has no holes, and the edge bond-rate amounts to above 98%, and the bond strength is above 2156 Pa. By doping the same kind of dopant with low-resistance in Ge, the stress compensation was realized.
A new set of technique was adopted in bonding Si-Si by using Ge (Ⅳ element),which is used as the substitute for the common hydrophilic method. The bond layer has no holes, and the edge bond-rate amounts to above 98%, and the bond strength is above 2156 Pa. By doping the same kind of dopant with low-resistance in Ge, the stress compensation was realized.
