摘要
报道了用直流反应溅射法在低氧分压条件下(6.0×10-3~8.0×10-3Pa)沉积ZrO2介质膜的制备工艺,XRD分析表明该条件下制备的ZrO2介质膜结构均为非晶态,表面光热技术测量其在10.6μm波长下的吸收系数为1.223×10-3~1.285×10-3cm-1,且吸收率随氧分压的升高而降低.这表明,表面光热测量是一种既简单又有很高灵敏度的实时检测技术,而在直流反应溅射法中氧分压是一个非常敏感的工艺参数,并显著地影响着膜层的光吸收.
In this paper the preparation technology of ZrO_2 dielectric thin films by direct current reaction sputtering method at different O_2 partial pressures (6.0×10^(-3)~8.0×10^(-3) Pa) has been reported. The structure of ZrO_2 dielectric thin film is verified to be amorphous by X-ray diffraction analysis. The absorption coefficient is between 1.223×10^(-3)~1.285×10^(-3)cm^(-1) at 10.6 μm and the absorptivity reduces with the O_2 partial pressure increasing. This means that the surface photothermal measurement technology is simple and highly sensitive, the O_2 partial pressure is a very sensitive technical parameter; and it can strikingly influence the photo absorption of ZrO_2 dielectric thin film.
出处
《四川师范大学学报(自然科学版)》
CAS
CSCD
2004年第4期402-404,共3页
Journal of Sichuan Normal University(Natural Science)
基金
国家863 804基金资助项目
关键词
ZRO2
直流反应溅射
光热效应
吸收系数
ZrO_2
Direct current reaction sputtering
Photothermal effect
Absorption coefficient