ZrO_2介质膜的光热吸收研究

Photothermal Absorption Research of ZrO_2 Dielectric Thin Film

报道了用直流反应溅射法在低氧分压条件下(6.0×10-3～8.0×10-3Pa)沉积ZrO2介质膜的制备工艺,XRD分析表明该条件下制备的ZrO2介质膜结构均为非晶态,表面光热技术测量其在10.6μm波长下的吸收系数为1.223×10-3～1.285×10-3cm-1,且吸收率随氧分压的升高而降低.这表明,表面光热测量是一种既简单又有很高灵敏度的实时检测技术,而在直流反应溅射法中氧分压是一个非常敏感的工艺参数,并显著地影响着膜层的光吸收.

In this paper the preparation technology of ZrO_2 dielectric thin films by direct current reaction sputtering method at different O_2 partial pressures (6.0×10^(-3)～8.0×10^(-3) Pa) has been reported. The structure of ZrO_2 dielectric thin film is verified to be amorphous by X-ray diffraction analysis. The absorption coefficient is between 1.223×10^(-3)～1.285×10^(-3)cm^(-1) at 10.6 μm and the absorptivity reduces with the O_2 partial pressure increasing. This means that the surface photothermal measurement technology is simple and highly sensitive, the O_2 partial pressure is a very sensitive technical parameter; and it can strikingly influence the photo absorption of ZrO_2 dielectric thin film.