摘要
介绍了大型相控晶闸管、IGBT及IGCT三种兆瓦级新型电力半导体器件的发展、技术特征和应用领域,初步探讨了器件的物理极限和未来的发展方向。
It is introduced the development,technique performance and the application field of megawatts grade new power semiconductor devices such as large PCT,IGBT and IGCT.The physical limitation and future development of the devices are primarily discussed.
出处
《大功率变流技术》
2012年第1期1-8,共8页
HIGH POWER CONVERTER TECHNOLOGY
