期刊文献+

基于ANSYS的大功率IGBT模块传热性能分析 被引量:11

Thermal Performance Analysis of High-power IGBT Module Based on ANSYS
下载PDF
导出
摘要 利用ANSYS有限元分析软件建立了IGBT模块封装结构的三维有限元模型,分析了模块稳态工作条件下的温度场分布,研究了不同基板材料及厚度、不同焊层材料及厚度对模块散热性能的影响。 A three-dimensional FEA model of IGBT module is constructed by utilizing finite element analysis of ANSYS.Temperature distribution of the model under steady condition is analyzed and effects of baseplate material and thickness,solder material and layer thickness on thermal conduction performance of IGBT module are studied.
出处 《大功率变流技术》 2012年第2期16-20,共5页 HIGH POWER CONVERTER TECHNOLOGY
关键词 IGBT模块 焊层厚度 焊料 基板厚度 基板材料 热分析 有限元分析 IGBT module solder layer thickness solder baseplate thickness baseplate material thermal analysis finite element analysis
  • 相关文献

参考文献6

  • 1Fabis P M,Shun D,Win dischm ann H. Thermal modeling of diamond based power electronic package[A].Northboro,1999.98-104.
  • 2Newcombe D R;Dinesh C;Bailey C.Reliablity Metrics for IGBT Power Modules[A]陕西西安,2010670-674.
  • 3陶文铨.传热学[M]西安:西北工业大学出版社,2006.
  • 4Mitic G,Degischer H P,Lefranc G,et al T. AlSiC composite materials in IGBT power modules[A].2000.3021-3027.
  • 5Azzopardi S,Thebaud J M,Worigard E. Al/SiC baseplate hybrid power modules:evaluation of the thermomechanical performances[A].Chicago,USA,1998.74-78.
  • 6Zhiye Z Z,Calata J. Low-Temperature Sintered Nanoscale Silver as a Novel Semiconductor Device-Metaiized Substrate Interconnect Material[J].IEEE Transactions on Components Packaging and Manufacturing Technology,2006,(03):589-593.

同被引文献79

  • 1袁柳林,刘胜,陈明祥,罗小兵.基于微通道致冷的大功率LED阵列封装热分析[J].半导体光电,2006,27(6):712-716. 被引量:23
  • 2纽春萍,陈德桂,刘颖异,戴瑞成.交流接触器温度场仿真及影响因素的分析[J].电工技术学报,2007,22(5):71-77. 被引量:52
  • 3Josifovil, Popovic-Gerber J, Ferreira J A. Thermal Manage- ment Concepts for Power Sandwich Industrial Drive[C]//CIPS, Nuremberg/Germany :CIPS, 2012: 6-8.
  • 4Michael Goroll, Reinhard Pufall. Determination of adhesion and delamination prediction for semiconductor packages by using Grey Scale Correlation and Cohesive Zone Modelling [ J . Microelectronics Reliability. 2012. 52: 2289-2293.
  • 5Arendt Wintrich, Ulrich Nicolai, Wemer Tursky, Tobias Reimann. Application Manual Power Semiconductors [ M ] SEMIKRON International GmbH. 82-90.
  • 6Raffael Schnell, Martin Bayer, Silvan Geissmann. Thermal Design and Temperature Ratings of IGBT Modules. ABBApplication Note [EB//OL]. [2013-03-06]. http://www.abb.com /semiconductors.
  • 7Bahrami M, Culham J R, Yovanovich M M, Schneider G E. Thermal Contact Resistance of Nonconforming Rough Surfaces, Part1: Contact Mechanics Model and Part2: Thermal Model [J Journal of Thermo Physics and Heat Transfer, 2004,18 (2).
  • 8Haiming HUANG, Xiaoliang XU. Effects of Surface Morphology on Thermal Contact Resistance[J]. Thermal Science, 2011, 15( 1 ), 33-38.
  • 9Bahrami M, Culham J R, Yovanovich M M. A Scale Analysis Approach to Thermal Contact Resistance[ C ]//Proceeding of IMECE' 03. Washington DC: 2003 ASME International Me- chanical Engineering Congress, 2003.
  • 10Zhang L, Azzopardi S, Gracia A, Woirgard E, Deletage J Y. Development of high temperature packaging technologies for SiC power devices based on finite elements simulations and experiments: thermal approach [C]. Nuremberg Germany: CIPS, 2012: 6-8.

引证文献11

二级引证文献43

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部