单粒子翻转二维成像技术

Technique of Single Event Upset mapping

为了给星用半导体器件不同区域的单粒子翻转(SEU)机理研究提供一种高效、可靠手段,基于北京HI-13串列加速器,从重离子微束辐照技术和存储器单粒子效应检测技术这2方面,对微电子器件SEU二维成像测试技术进行了研究,建立了基于虚拟技术的测试系统。利用该成像技术,对国产2 kbit静态随机存储器(SRAM)的SEU敏感区域进行了实验研究,结果与理论结果及以往手动测试实验结果一致。

To study the Single Event Upset(SEU) mechanism in different regions of Integrated Circuits(IC),a SEU mapping system was established on heavy ion micro-beam facility in Beijing HI-13 Tandem Accelerator.It produces micron-resolution maps when single-event upsets occur during ion irradiation of integrated circuits.From these upset maps,the identity and size of a circuit’s upset-prone components can be directly determined.Utilizing this system,a 2 kbit Static Random Access Memory(SRAM)(made in China) SEU map was obtained,which accorded well with the theoretical results and the earlier experiment results.