电场调谐InAs量子点激子精细结构劈裂

Electric Field Tuning Exciton Fine Structure Splitting of InAs Single Quantum Dots

在低温5K下,采用光致发光光谱及外加偏压调谐InAs量子点激子精细结构劈裂,研究了不同量子点激子的精细结构劈裂值大小,以及垂直电场有效地调谐激子的精细结构劈裂.对于具有较小精细结构劈裂的量子点样品,外加偏压可以使其精细结构劈裂值减小到小于激子的本征光谱宽度,从而实现基于单双激子纠缠态的制备.

The fine structure splitting(FSS) of the excitons for different InAs quantum dots(QDs) have been studied by using photoluminescence(PL) and applied vertically bias voltage at low temperature of 5 K.It is found that FSS of the excitons is effectively tuned via applied bias voltage.For the QDs with a small value of the FSS,by applied bias voltage FSS can be reduced down to a value of the intrinsic linewidth of the exciton emission,leading to a fabrication of entangled states based on excitons and biexcitons.