3D基底上碳纳米管场发射I-V特性建模与计算

The modeling and calculation of I-V characteristic of the carbon nanotube field emission of the 3D substrate

利用有限元分析软件ANSYS分析了在平面上引入立体墙结构的阴极电场分布,给出了立体墙结构阴极表面的场强分布曲线,结合F-N方程计算了在立体结构上生长碳纳米管和平面型冷阴极上直接生长碳纳米管的电流密度,通过数值计算计算了总的场发射电流,结果表明,场发射电流随场强的变化非常大,立体墙结构型冷阴极场发射电流与平面型冷阴极发射电流相比,场发射能力得到极大的增强。

Using the finite element analysis software ANSYS analysis the electric field distribution of the cold cathode surface of stereo wall structure.The electric field distribution of the cold cathode surface of stereo wall structure is given,The current density of carbon nanotubes of stereo wall structure and the plane is calculated by the F-N equation.by numerical calculation,The total emission current results show that the field emission current with electric field change is very big.Stereo wall structure of field emission current compared with the planar emission current,Field emission capability has been greatly enhanced.