摘要
在简述多晶硅片加工技术的基础上,重点阐述了碳化硅这个因素对于多晶硅片切片的影响。通过实验设计方法设计出来一组单因素的实验,把碳化硅粒径作为变量,总厚度偏差(TTV)和过程能力指数(CPK)作为输出,使用Mintab软件对实验结果进行分析,得到相关的分析结果。经过理论分析和实验结果进行对比可知:1 500#碳化硅切割出来多晶硅片的TTV值比1 200#碳化硅的减小了3.72%,即1 500#碳化硅切割出的多晶硅片TTV明显优于1 200#碳化硅。
The poly-silicon wafer processing technology is briefly described,and the influence of silicon carbide on the poly-silicon wafer slices is focused on.Through the single factor experiment,taking the silicon carbide particle size as a variable,total thickness variation(TTV) and complex process capability index(CPK) as the output,the experimental data is analyzed by Mintab software.Finally,theoretical analysis and experimental results are compared,and the final conclusion is got.The TTV of poly-silicon wafer cut by 1 500# SiC is 3.72% narrower than that of 1 200# SiC,which means that the TTV of poly-silicon wafer cut by 1 500# SiC is significantly better.
出处
《金刚石与磨料磨具工程》
CAS
2013年第3期44-49,共6页
Diamond & Abrasives Engineering
关键词
碳化硅颗粒
多晶硅片
总厚度偏差
过程能力指数
silicon carbide particles
poly-silicon wafer
total thickness variation
complex process capability index
