摘要
在c-plane面蓝宝石衬底上生长了ZnO/Zn0.85Mg0.15O非对称双量子阱,其内量子效率相对于对称量子阱有了显著的提高。ZnO/Zn0.85Mg0.15O的10周期对称量子阱和5周期非对称双量子阱都是利用等离子体辅助分子束外延技术制备的。ZnO/Zn0.85Mg0.15O非对称双量子阱的内量子效率提高至对称阱的1.56倍。时间分辨光谱和光致发光谱测试结果证实,在ZnO/Zn0.85Mg0.15O非对称双量子阱中存在从窄阱到宽阱的激子隧穿过程,这是内量子效率提高的主要原因。
We report a dramatic increase in the internal quantum efficiency(IQE) of ZnO/ZnMgO multi-quantum wells(MQWs) fabricated on c-plane sapphire substrate by introducing asymmetric double-quantum-well(ADQW) structure.A marked enhancement in efficiency,by as much as 1.56 times,was observed for the ZnO/ZnMgO five-period ADQW grown by plasma-assisted molecular beam epitaxy(P-MBE),compared to the ten-period symmetrical MQWs with asymmetric structure.The effects of excitons tunneling from the narrow well to the wide well,which was proved by photoluminescence spectra and time-resolved photoluminescence spectroscopy,can influence the IQE.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2013年第7期872-876,共5页
Chinese Journal of Luminescence
基金
国家自然科学基金(21100146)
国家"973"计划(2011CB302006
2011CB302002)资助项目
关键词
ZNO
量子阱
激子隧穿
内量子效率
ZnO
quantum wells
excitons tunneling
internal quantum efficiency
