AlGaInP DH-LED的pn结特性

pn Junction Characteristic of AlGaInP DH-LED

针对AlGaInP DH-LED的pn结特性进行了理论分析,得出电流密度J与电压V的关系。通过Matlab进行模拟分析,结果表明:当温度(300 K)一定时,在电压较小的情况下,电流密度成直线形式增大;当电压增大到一定值时,电流密度成对数形式增大;当电压过大时,电流密度几乎不增大。随着电压的升高,器件产生焦耳热增多,影响器件的工作特性,最终缩短LED的寿命。综合考虑,最后得出理论上的最佳发光驱动电压范围为2~2.33 V。

The pn junction characteristics of AlGaInP DH-LED was analyzed by using Matlab simulation.The relationship of current density J and voltage V at certain temperature(300 K) was obtained.Under low voltage,the current density increases linearly with the voltage.When the voltage increases to a certain value,the current density increases in logarithmic pattern.When the voltage is too high,the current density does not increase with the voltage.With the increase of voltage,the Joule heat of the device,and affect the device characteristics,and finally shorten the LED life.Comprehensive consideration,the theory of optimal driving voltage range finally load at 2 ~ 2.33 V.The research results provide theoretical reference and guidance for the design of LED array integrated device.