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Al组分对MOCVD制备的Al_xGa_(1-x)N/AlN/GaNHEMT电学和结构性质的影响 被引量：3

Influence of Al Composition on Electrical and Structural Properties of Al_xGa_(1- x)N/AlN/GaN HEMT Materials Grown by MOCVD
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摘要 采用金属有机化合物化学气相沉积(MOCVD)方法制备了不同Al组分(x=0.19,0.22,0.25,0.32)的Al x Ga1-x N/AlN/GaN结构的高电子迁移率晶体管(HEMT)材料。研究了Al x Ga1-x N势垒层中Al组分对HEMT材料电学性质和结构性质的影响。研究结果表明,在一定的Al组分范围内,二维电子气(2DEG)浓度和迁移率随着Al组分的升高而增大。然而,过高的Al组分导致HEMT材料表面粗糙度增大,2DEG迁移率降低,该实验现象在另一方面得到了原子力显微镜测试结果的验证。在最佳Al组分(25%)范围内,获得的HEMT材料的2DEG浓度和室温迁移率分别达到1.2×1013cm-2和1 680 cm2/(V·s),方块电阻低至310Ω/□。 AlxGa1xN / AlN / GaN high electron mobility transistor(HEMT) materials with different Al compositions( x =0. 19,0. 22,0. 25,0. 32) were grown on sapphire substrates by metalorganic chemical vapor deposition( MOCVD). The effects of Al composition on electrical and structural properties of HEMTs materials were analyzed. It is observed that two-dimensional electron gas(2DEG) density and mobility are improved with the raising of Al content within a certain range. However,too high Al composition will make the surface turn to be rougher and the mobility deteriorate,which was reinforced by the test results of atomic force microscopy( AFM). The optimum Al content is 25%. Based on this,the HEMT materials showed a high 2DEG density of 1. 2 × 1013cm-2 with a low sheet resistance of 310 Ω/□,and highly Hall mobility of 1 680 cm2/( V·s) at room temperature.
作者 陈翔 邢艳辉 韩军 霍文娟 钟林健 崔明 范亚明 朱建军 张宝顺
机构地区 北京工业大学电子信息与控制工程学院 光电子技术省部共建教育部重点实验室 中国科学院苏州纳米技术与纳米仿生研究所 纳米器件与应用重点实验室
出处 《发光学报》 EI CAS CSCD 北大核心 2013年第12期1646-1650,共5页 Chinese Journal of Luminescence
基金 国家自然科学基金(61204011 61107026 61176126 61006084) 国家杰出青年科学基金(60925017) 北京市自然科学基金(4102003 4112006) 北京市教委科研计划(KM201210005004)资助项目
关键词 AL组分 ALGAN 高电子迁移率晶体管 电学性质 MOCVD Al composition AlGaN HEMT electrical properties MOCVD
分类号 O482.31 [理学—固体物理]
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参考文献16

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二级参考文献39

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共引文献8

同被引文献15

  • 1Nam Han,Young Jae Park,Min Han,Beo Deul Ryu,Kang Bok Ko,S. Chandramohan,Chel-Jong Choi,Tran Viet Cuong,Chang-Hee Hong.Threading dislocation reduction in epitaxial GaN using V-groove patterned sapphire substrate with embedded silica nanospheres[J]. Materials Letters . 2014
  • 2Hui-Youn Shin,S.K. Kwon,Y.I. Chang,M.J. Cho,K.H. Park.Reducing dislocation density in GaN films using a cone-shaped patterned sapphire substrate[J]. Journal of Crystal Growth . 2009 (17)
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  • 8王小丽,王文新,江洋,马紫光,崔彦翔,贾海强,宋京,陈弘.具有超晶格应力调制结构的绿光InGaN/GaN多量子阱的发光特性[J].发光学报,2011,32(11):1152-1158. 被引量：5
  • 9倪金玉,董逊,周建军,孔岑,李忠辉,李亮,彭大青,张东国,陆海燕,耿习娇.含有Al组分阶变AlGaN过渡层的Si基AlGaN／GaNHEMT[J].固体电子学研究与进展,2011,31(6):527-531. 被引量：5
  • 10王冲,何云龙,郑雪峰,郝跃,马晓华,张进城.AlGaN/GaN HEMTs with 0.2μm V-gate recesses for X-band application[J].Journal of Semiconductors,2012,33(3):24-27. 被引量：3

引证文献3

二级引证文献3

发光学报
2013年 第12期

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