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A Piecewise-Linear Compensated Bandgap Reference 被引量:5

一种分段线性补偿的带隙基准(英文)
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摘要 A bandgap voltage reference is presented with a piecewise linear compensating circuit in order to reduce the temperature coefficient.The basic principle is to divide the whole operating temperature range into some sub ranges.At different temperature sub ranges the bandgap reference can be compensated by different linear functions.Since the temperature sub range is much narrower than the whole range,the compensation error can be reduced significantly.Theoretically,the precision can be improved unlimitedly if the sub ranges are narrow enough.In the given example,with only three temperature sub ranges,the temperature coefficient of a conventional bandgap reference drops from 1 5×10 -5 /℃ to 2×10 -6 /℃ over the -40℃ to 120℃ temperature range. 提出了一种采用分段线性补偿的方法来实现高精度带隙基准 ,其基本原理是将整个温度区间分为若干个子区间 ,在不同子区间上采用不同线性补偿函数达到最佳补偿 .由于温度区间缩小 ,补偿误差也随之减小 ,从而在整个工作温度区间上的补偿误差也缩小 .理论上 ,只要温度子区间取得足够小 ,就可以达到任意精度 .示例中将 - 4 0~ 1 2 0℃的温度区间仅分为三个子区间 ,平均温度系数就从 1 .5× 1 0 - 5/℃减小到 2× 1 0 - 6 /℃ .
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第7期771-777,共7页 半导体学报(英文版)
关键词 bandgap voltage reference piecewise linearly compensated curvature corrected temperature coefficient reference circuits 带隙基准 分段线性补偿 曲率校正 温度系数 基准电路 EEACC 2570B 1205 1130B
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参考文献7

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同被引文献25

  • 1周耀,汪西川,陈光明.一种采用曲率补偿技术的高精度带隙基准电压源的设计[J].微计算机信息,2004,20(12):104-105. 被引量:8
  • 2姜韬,杨华中.Bandgap Reference Design by Means of Multiple Point Curvature Compensation[J].Journal of Semiconductors,2007,28(4):490-495. 被引量:6
  • 3Leung K N,Mok P K T,Leung C Y.A 2-V 23 μA 5.3 ppm/℃ curvature-compensated CMOS bandgap voltage reference[J].IEEE Journal of Solid-State Circuits,2003,38(3):561-564.
  • 4[2]Tsividis Y.Aeeurate Analysis of Temperature Effeetsin Characteristics with Application to Bandgap Reference Sources[J].IEEE J.Solid-State Circuits.1980,15 (6):1076-1084.
  • 5Koudounas S, Andreou C M, Georgiou J. A novel CMOS bandgap reference circuit with improved high-or- der temperature compensation [C]//Proceedings of 1EEE International Symposium on Circuits and Systems. Pairs, 2010 : 4073 - 4076.
  • 6Li Yan, Wu Jin, Huang Zhiqi, et al. A sub-1 ppm/℃ high-order curvature-compensated bandgap reference [ C ]//IEEE Asia Pacific Conference on Circuits and Systems. Macao, China, 2008 : 1204 - 1207.
  • 7Ken U, Tetsuya H, Tetsuya A, et al. A 300 nW, 15 ppm/℃, 20 ppm/V CMOS voltage reference circuit consisting of subthreshold MOSFETs[J].IEEE Journal of Solid State Circuits, 2009, 44 ( 7 ) : 2047 - 2054.
  • 8Leung KN, MokP KT, Leung C Y. A2-V23-μA 5.3-ppm/℃ curvature-compensated CMOS bandgap voltage reference [J]. IEEE Journal of Solid State Cir-cuits, 2003, 38(3): 561-564.
  • 9Guan Xiaokang, Wang Xin, Wang A, et al. A 3 V 110 pμW 3. 1 ppm/℃ curvature-compensated CMOS bandgap reference [J ]. Analog Integrated Circuit and Signal Processing, 2010, 62(2):113- 119.
  • 10Fayomi C J B, Wirth G I, Achigui H F, et al. Sub 1 V CMOS bandgap reference design techniques: a survey[ J]. Analog Integrated Circuit and Signal Processing, 2010, 62(2) :141 - 157.

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