摘要
利用低压金属有机源气相沉积 (L P- MOCVD)技术 ,在 (0 0 0 1 )蓝宝石衬底上生长 Zn O纳米岛 ,发现在适当的生长条件下 ,可以生长出规则排列的纳米岛 .实验发现随着生长时间的增加 ,在蓝宝石衬底上沉积的 Zn O晶体颗粒无论是密度还是体积都在增加 ,并出现颗粒之间的交叠现象 .与厚膜材料相比 ,相应的室温 PL 谱上显示出带边蓝移现象 ,随着生长温度的提高将大大增加 Zn O在蓝宝石衬底上成核的困难 .另外 ,所有样品的室温 PL 谱在带边附近均存在一个展宽峰 ,这可能是由表面态或晶体缺陷造成的 .研究表明选择合适的生长时间与生长温度是利用MOCVD生长高质量 Zn
Well ordered ZnO islands are successfully grown on Al 2O 3 (0001) substrates by using the metal organic chemical vapor deposition in a suitable condition.Increasing growth time is found to increase the density and grain size of the ZnO nanosize islands.High growth temperature leads it difficult for ZnO islands to nuclear on the sapphire surface.Compared with the ZnO film,the blue shift of the band edge emission is observed in the room temperature PL spectra,together with a broad green emission near the band edge which possibly resulting from the surface state or defect of ZnO islands.This study indicates that proper growth conditions such as growth time and temperature are some of the determined factors to grow high quality ZnO nanosize islands.
基金
国家重点基础研究发展规划 (批准号 :G0 0 1CB3 0 95 )
国家自然科学基金 (批准号 :G60 2 760 11
60 2 90 0 83 )
国家高技术研究发展计划 (批准号 :2 0 0 2 AA3 110 60 )资助项目~~
