硼离子选择注入制备多孔硅微阵列

Formation of Selective Porous Silicon Array Using Boron Ion Implantation

根据 p型硅和 n型硅不同的制备多孔硅的工艺条件 ,利用硼离子选择注入 ,在 n型硅片上的局部微区域 ,形成易于腐蚀的 p型硅 ,用电化学腐蚀方法制备出图形化的多孔硅阵列 .省去了传统掩膜腐蚀工艺的掩膜材料的选取与制备以及后道工艺中掩膜材料的清除等工艺 ,克服了掩膜材料掩蔽效果较差以及存在横向钻蚀等缺点 .通过 AFM,SEM测试 。

According to the different porous silicon fabricating process of p type and n type silicon substrate,a new technology of boron ion implantation to form a selective p type array on n type substrate is introduced.After electrochemical etching process,a selective porous silicon is obtained.By this way,the defects of the conventional mask technology are avoided.The selective porous silicon array is characterized by AFM and SEM.