非制冷热释电薄膜红外探测器热绝缘结构的研制

Fabrication of Thermal Insulation Structure for Uncooled Pyroelectric Thin Film IR Detector

采用由多孔 Si O2 薄膜和过渡 Si O2 薄膜组成的复合薄膜结构实现了非制冷热释电薄膜红外探测器的热绝缘 .利用溶胶凝胶方法制备了多孔 Si O2 薄膜以及过渡 Si O2 薄膜 ,通过优化制备工艺 ,使得多孔 Si O2 一次成膜厚度达到30 70 nm ,孔率达到 5 9% ;过渡 Si O2 一次成膜的厚度达到 1 88nm,孔率达到 4 % .AFM表明 ,由过渡 Si O2 薄膜与多孔Si O2 组成的复合薄膜结构的表面粗糙度远小于多孔 Si O2 薄膜的表面粗糙度 .

Multilayer film that consists of porous silica layer integrated with silica buffer layer is used as thermal insulating structure for uncooled pyroelectric thin film IR detector.Porous silica film and buffer silica film are prepared by sol gel method.By optimizing fabricating process,porous silica films with thickness of 3070nm and porosity of 59% and buffer silica film with thickness of 188nm and porosity of 4% are successfully achieved by spin coating.AFM experiment results show that the surface roughness of porous silica film decreases after being integrated with buffer silica film.The thermal insulating structure is suitable to integrate other functional films to fabricate the detector.