摘要
采用化学气相法分别在石英舟内表面和单晶硅衬底上制备了ZnO微米片、纳米线、微米四足体以及微米球4种结构,并制作了相应的气敏传感器。扫描电子显微镜、气敏测试仪等结果显示:合成的ZnO纳米/微米结构尺寸在200 nm^100μm之间,传感器最佳工作电流区间为120~130 mA,其中微米四足体制备的传感器灵敏度高达127,展现出优异的气敏特性。在4种结构中,微米四足体材料内部的VO缺陷含量最高,结合气敏测试与荧光光谱结果,我们认为材料内部的VO缺陷含量是影响材料气敏特性的最重要因素。
The micro plates, nano wires, micro tetrapods and micro spheres of ZnO were fabricated on the internal surface of quartz boat and the surface of single crystal silicon by chemical vapor deposition method, and the corresponding gas sensors were made. The following testing results from scanning electron microscope, the gas sensor testing instrument were obtained. The as grown ZnO with nano/micro structures have a different size from 200 nm to 100 μm. The optimized working currents range of these sensors are 120~130 mA. The gas sensor fabricated by micro tetrapods of ZnO exhibits the best sensitivity property and the corresponding sensitivity is up to 127. The highest content of VO defect exists in micro tetrapods of ZnO. Combining the gas sensor testing with PL spectra results, we attribute the most important factor affecting the gas sensor property to the content of VO defect in these materials.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2014年第4期460-464,共5页
Chinese Journal of Luminescence
基金
国家自然科学基金(60976036
51371120
51302174)
深圳市科技计划项目资助
关键词
ZNO
化学气相法
气敏特性
缺陷含量
Chemical sensors
Chemical vapor deposition
Gas detectors
Instrument testing
Materials testing
Quartz
Scanning electron microscopy
Silicon wafers
Vapors