摘要
LED芯片漏电参数(IR)是判断芯片良率及性能检测的重要参数,但芯片漏电现象一直存在并困扰着业内的工程师。从芯片制造工艺技术出发,详细分析了制造过程中引起LED芯片漏电的潜在原因,包括:电子束蒸镀ITO层时,薄膜缺陷可能带来的芯片潜在漏电原因;钝化层沉积时,薄膜缺陷可能带来的芯片潜在漏电原因;芯片切割裂片时,切割裂片工艺以及芯片成品包装时可能带来的芯片潜在漏电原因。
Leakage current(IR) of LED chips is an important parameter to evaluate the chip yield and performance, but the leakage phenomenon of LED chips always exists in chip manufacture, and it affects the industry engineers. In this paper, from the manufacturing processes, we analyze several possible causes for the leakage of LED chips, including the thin fi lm defects which are caused by electron beam deposition of ITO layer, and passivation layer deposition, chips dicing and cutting, and product packaging.
出处
《中国照明电器》
2014年第6期8-10,共3页
China Light & Lighting
基金
2012年度江门市LED产业发展专项资金(江财工[2012]326)
关键词
芯片制造工艺
漏电参数(IR)
漏电原因
LED chip manufacturing processes
leakage current parameter(IR)
causes for leakage
