C^+离子注入SiGe衬底提高NiSiGe表面和界面特性研究

Improved NiSiGe Surface and Interface Morphologies on C Pre-implanted SiGe

本文主要研究了不同剂量C+离子预先注入Si0.8Ge0.2衬底后,对Ni和Si0.8Ge0.2反应的影响。研究结果充分表明:C+离子注入的Si0.8Ge0.2衬底,降低了Ni和Si0.8Ge0.2反应的速度,提高了NiSi0.8Ge0.2的热稳定性。此外,我们发现C原子分布在NiSi0.8Ge0.2/Si0.8Ge0.2的界面,大幅度降低了NiSi0.8Ge0.2表面和NiSi0.8Ge0.2/Si0.8Ge0.2界面的粗糙度,高剂量C+注入的样品效果更为明显。

We investigated the effect of C ion implantationinto SiGe layers on the formation of NiSiGe layers. The layer morphology is investigated as a function of the C implantation dose and annealingtemperature. The presence of C atoms retards the Ni germanosilicidation rate and increases the thermal stability of NiSiGe by about 200℃. We demonstrated that the carbonatoms retard the Ni germanosilicidation rate,stabilize the NiSiGe phase. Theseeffects become more pronounced for higher C implantation dose.